Light-enhanced gating effect at the interface of oxide heterostructure

Abstract In semiconducting materials, electrostatic gating and light illumination are widely used stimuli to tune the electronic properties of system. Here, we show a significant enhancement photoresponse at conducting interface LaVO 3 –SrTiO under simultaneous application negative gate bias voltage, in comparison their individual application. On other hand, illuminated -SrTiO does not any enhancement, when positive voltage is applied. Our x-ray diffractometer, Raman spectroscopy photoemission measurements that unlike LaAlO interface, migration oxygen vacancies may be prime mechanism for enhanced photoresponse. Rather, suggest our system intrinsic this complex interplay between band filling, electric field modification channel width.